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ChinaMSC080SMA120B
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TEILNUMMER DES HERSTELLERS
MSC080SMA120B
BESCHREIBUNG
SICFET N-CH 1200V 37A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 37A (Tc) 200W (Tc) Through Hole TO-247-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
11 Weeks
EDACAD-MODELL
MSC080SMA120B Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
838 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
MSC080
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology MSC080SMA120B
Dokumente und Medien
Datasheets
1(MSC080SMA120B)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Design/Specification
1(Top Marking Changes 22/Feb/2023)
PCN Assembly/Origin
1(MG15F-35AB/MG15F-0140B Mold Compound 26/Feb/2024)
PCN Packaging
1(Label Change 03/Jan/2023)
EDA Models
1(MSC080SMA120B Models)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $9.64
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 25
Einzelpreis: $11.8
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $12.8
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-