Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
KSH122ITU
BESCHREIBUNG
TRANS NPN DARL 100V 8A IPAK
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 1.75 W Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
4V @ 80mA, 8A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A, 4V
Power - Max
1.75 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Base Product Number
KSH12

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSH122ITU

Dokumente und Medien

Datasheets
1(KSH122(I))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices EOL 12/Apr/2019)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
()
HTML Datasheet
1(KSH122(I))

Menge Preis

-

Stellvertreter

Teil Nr. : MJD122-1
Hersteller. : STMicroelectronics
Verfügbare Menge. : 2,794
Einzelpreis. : $0.97000
Ersatztyp. : Direct