China
Spain
Rusia
Italy
GermanyMPQ6842
Part Number Overview
Manufacturer Part Number
MPQ6842
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor Array NPN, PNP Complementary 30V 200mA 350MHz 500mW Through Hole 14-PDIP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
296
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP Complementary
Current - Collector (Ic) (Max)
200mA
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
150mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 1V
Power - Max
500mW
Frequency - Transition
350MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Supplier Device Package
14-PDIP
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-MPQ6842
ONSONSMPQ6842
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/onsemi MPQ6842
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 296
Unit Price: $1.01
Packaging: Bulk
MinMultiplier: 296
Packaging: Bulk
MinMultiplier: 296
Substitutes
-