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Part Number Overview
Manufacturer Part Number
2SB1032K-E
Description
POWER BIPOLAR TRANSISTOR, PNP
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 120 V 10 A 80 W Through Hole TO-3P
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
91
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
80 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SB1032K-E
RENRNS2SB1032K-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1032K-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 91
Unit Price: $3.33
Packaging: Bulk
MinMultiplier: 91
Packaging: Bulk
MinMultiplier: 91
Substitutes
-