Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.8A, 4.8A
Rds On (Max) @ Id, Vgs
25mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 25V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
ZXMC3