Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2260 pF @ 10 V
Mounting Type
Surface Mount
Supplier Device Package
8-SOP (5.5x6.0)
Package / Case
8-SOIC (0.173", 4.40mm Width)
Base Product Number
TPC8109