Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1565 pF @ 100 V
Power Dissipation (Max)
162W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Base Product Number
FCP650