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Номер запчасти
Номер запчасти изготовителя
BSP123L6327HTSA1
Примечания
MOSFET N-CH 100V 370MA SOT223-4
Подробное описание
N-Channel 100 V 370mA (Ta) 1.79W (Ta) Surface Mount PG-SOT223-4
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
1,000
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
70 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.79W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Классификация окружающей среды и экспорта
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
BSP123INCT-ND
BSP123L6327HTSA1DKR
BSP123
BSP123INTR
BSP123INDKR-ND
BSP123INTR-ND
BSP123L6327HTSA1TR
BSP123 L6327-ND
BSP123L6327-ND
BSP123L6327INCT-ND
BSP123L6327
BSP123L6327XT
BSP123L6327INDKR-ND
BSP123L6327INCT
BSP123L6327INDKR
BSP123L6327INTRINACTIVE
BSP123INCT
BSP123L6327INCTINACTIVE
BSP123 L6327
BSP123L6327TR
SP000089202
BSP123L6327HTSA1CT
BSP123L6327TR-ND
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP123L6327HTSA1
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1(BSP123)
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