Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
83mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SSM3K303