Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
131A (Tc)
Rds On (Max) @ Id, Vgs
20mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
2.2V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
246nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
4750pF @ 1000V
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
D-3 Module
Supplier Device Package
D3
Base Product Number
APTMC120