Mfr
Toshiba Semiconductor and Storage
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Frequency - Transition
150MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
HN1B04