Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs
42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 10V, 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
416pF @ 10V, 536pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSOT-26
Base Product Number
DMC2057