Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4V
Rds On (Max) @ Id, Vgs
205mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id
1.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
174 pF @ 10 V
Power Dissipation (Max)
400mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CST4 (1.2x0.8)
Package / Case
4-SMD, No Lead
Base Product Number
SSM4K27