Mfr
                    
					Toshiba Semiconductor and Storage
					
                   
                    Technology
                    
					MOSFET (Metal Oxide)
					
                   
                    Drain to Source Voltage (Vdss)
                    
					500 V
					
                   
                    Current - Continuous Drain (Id) @ 25°C
                    
					5A (Ta)
					
                   
                    Drive Voltage (Max Rds On, Min Rds On)
                    
					10V
					
                   
                    Rds On (Max) @ Id, Vgs
                    
					1.5Ohm @ 5A, 10V
					
                   
                    Vgs(th) (Max) @ Id
                    
					4V @ 1mA
					
                   
                    Gate Charge (Qg) (Max) @ Vgs
                    
					17 nC @ 10 V
					
                   
                    Input Capacitance (Ciss) (Max) @ Vds
                    
					780 pF @ 10 V
					
                   
                    Power Dissipation (Max)
                    
					50W (Tc)
					
                   
                    Operating Temperature
                    
					150°C (TJ)
					
                   
                    Mounting Type
                    
					Surface Mount
					
                   
                    Supplier Device Package
                    
					4-TFP (9.2x9.2)
					
                   
                    Base Product Number
                    
					2SK3466