Series
TrenchFET® Gen III
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 10 V
Power Dissipation (Max)
2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-MICRO FOOT® (1.6x1.6)
Base Product Number
SI8481