Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
2 V @ 20 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
300 µA @ 650 V
Capacitance @ Vr, F
650pF @ 0V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SICR40650