Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4V
Rds On (Max) @ Id, Vgs
213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UFV
Package / Case
6-SMD (5 Leads), Flat Lead
Base Product Number
SSM5G10