Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
140mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MicroFET 3x3mm
Package / Case
6-WDFN Exposed Pad
Base Product Number
FDFM2P