Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.65 V @ 3 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
30 µA @ 650 V
Capacitance @ Vr, F
158pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C