Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
1.85V @ 250µA, 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.9nC @ 4.5V, 19.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1040pF @ 12.5V, 2510pF @ 12.5V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-VSON-CLIP (5x6)
Base Product Number
CSD86356