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Номер запчасти
Номер запчасти изготовителя
TSM1N80CW RPG
Примечания
MOSFET N-CH 800V 300MA SOT223
Подробное описание
N-Channel 800 V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223
Производитель
Taiwan Semiconductor Corporation
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
2,500
Запасы поставщиков
Технические нормы
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Base Product Number
TSM1N80
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
TSM1N80CW RPGCT
TSM1N80CWRPGCT
TSM1N80CWRPGTR
TSM1N80CW RPGDKR
TSM1N80CW RPGDKR-ND
TSM1N80CW RPGTR
TSM1N80CW RPGCT-ND
TSM1N80CWRPGDKR
TSM1N80CW RPGTR-ND
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM1N80CW RPG
Документация и средства массовой информации
Datasheets
1(TSM1N80)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 17/Sep/2017)
HTML Datasheet
1(TSM1N80)
Количественные цены
-
Альтернативы
-