Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
Vgs(th) (Max) @ Id
4V @ 66mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
30000pF @ 10V
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
Base Product Number
BSM250