Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
70A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
858 pF @ 12 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
51W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK33
Package / Case
SOT-1210, 8-LFPAK33 (5-Lead)