Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
Drain to Source Voltage (Vdss)
40V, 200V
Current - Continuous Drain (Id) @ 25°C
30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Input Capacitance (Ciss) (Max) @ Vds
1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Power - Max
48W (Tc), 60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
Die
Base Product Number
SQUN702