Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
320 pF @ 25 V
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TK1P90