Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
105mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSST
Package / Case
8-SMD, Flat Lead
Base Product Number
TT8U1