Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 800 V
Power Dissipation (Max)
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Base Product Number
SCT2080