Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs
170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
610pF @ 10V, 1550pF @ 25V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Base Product Number
SP8M51