Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2A, 1.5A
Rds On (Max) @ Id, Vgs
136mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
128pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
6-MCPH
Base Product Number
MCH6660