Series
GigaMOS™, HiPerFET™, TrenchT2™
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
150V
Current - Continuous Drain (Id) @ 25°C
53A
Rds On (Max) @ Id, Vgs
20mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
8600pF @ 25V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS i4-PAC™
Base Product Number
FMM110