Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.4A, 4.5A
Rds On (Max) @ Id, Vgs
26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.8nC @ 4.5V, 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 15V, 760pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
FDS89