Technology
SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
45mOhm @ 40A, 12V
Vgs(th) (Max) @ Id
6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 100 V
Power Dissipation (Max)
429W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
UF3C120040