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GermanyIRF7665S2TR1PBF
Номер запчасти
Номер запчасти изготовителя
IRF7665S2TR1PBF
Примечания
MOSFET N-CH 100V 4.1A DIRECTFET
Подробное описание
N-Channel 100 V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
1,000
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id
5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
515 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET SB
Package / Case
DirectFET™ Isometric SB
Классификация окружающей среды и экспорта
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
SP001577506
IRF7665S2TR1PBFDKR
IRF7665S2TR1PBFCT
IRF7665S2TR1PBFTR
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7665S2TR1PBF
Документация и средства массовой информации
Datasheets
1(IRF7665S2TR(1)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF7665S2TR(1)PbF)
Product Drawings
1(IR Hexfet Circuit)
Количественные цены
-
Альтернативы
-