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Номер запчасти
Номер запчасти изготовителя
IRF6655TRPBF
Примечания
MOSFET N-CH 100V 4.2A DIRECTFET
Подробное описание
N-Channel 100 V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
4,800
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.8V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SH
Package / Case
DirectFET™ Isometric SH
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
SP001562060
IRF6655TRPBFCT
IRF6655TRPBFTR
IRF6655TRPBFDKR
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6655TRPBF
Документация и средства массовой информации
Datasheets
1(IRF6655(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6655(TR)PbF)
Simulation Models
1(IRF6655TR1PBF Saber Model)
Product Drawings
()
Количественные цены
-
Альтернативы
-