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GermanyIRFU2405PBF
Номер запчасти
Номер запчасти изготовителя
IRFU2405PBF
Примечания
MOSFET N-CH 55V 56A IPAK
Подробное описание
N-Channel 55 V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
75
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRFU2405
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
SP001571782
Q8851986AAAA
64-4137PBF-NDL
*IRFU2405PBF
64-4137PBF-ND
64-4137PBF
2156-IRFU2405PBF-448
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU2405PBF
Документация и средства массовой информации
Datasheets
1(IRFR2405PbF, IRFU2405PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRFR2405PbF, IRFU2405PbF)
Количественные цены
-
Альтернативы
-