Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs
3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1410pF @ 15V, 4860pF @ 15V
Power - Max
2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PQFN (5x6)
Base Product Number
FDMS1