Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
117mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 15 V
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSM
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SSM3J306