Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 2.5V
Rds On (Max) @ Id, Vgs
136mOhm @ 1A, 2.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
568 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ES6
Package / Case
SOT-563, SOT-666
Base Product Number
SSM6J53