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Номер запчасти
Номер запчасти изготовителя
IPI45N06S409AKSA1
Примечания
MOSFET N-CH 60V 45A TO262-3
Подробное описание
N-Channel 60 V 45A (Tc) 71W (Tc) Through Hole PG-TO262-3
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
500
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3785 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI45N
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
IPI45N06S4-09-ND
IPI45N06S4-09
INFINFIPI45N06S409AKSA1
2156-IPI45N06S409AKSA1-IT
SP000374332
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI45N06S409AKSA1
Документация и средства массовой информации
Datasheets
1(IPx45N06S4-09)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx45N06S4-09)
Количественные цены
-
Альтернативы
-