Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
Base Product Number
SI6562