English
Spain
China
Italy
GermanyIPI110N20N3GAKSA1
Номер запчасти
Номер запчасти изготовителя
IPI110N20N3GAKSA1
Примечания
MOSFET N-CH 200V 88A TO262-3
Подробное описание
N-Channel 200 V 88A (Tc) 300W (Tc) Through Hole PG-TO262-3
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
500
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
87 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI110
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
IPI110N20N3 G
IPI110N20N3G
2156-IPI110N20N3GAKSA1
SP000714304
IFEINFIPI110N20N3GAKSA1
IPI110N20N3 G-ND
Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI110N20N3GAKSA1
Документация и средства массовой информации
Datasheets
1(IPx(107,110)N20N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Simulation Models
1(MOSFET OptiMOS™ 200V N-Channel Spice Model)
Количественные цены
-
Альтернативы
-