Mfr
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
9.4A
Voltage - Forward (Vf) (Max) @ If
1.34 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Capacitance @ Vr, F
1107pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-257
Operating Temperature - Junction
-55°C ~ 250°C
Base Product Number
1N8034