Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Rds On (Max) @ Id, Vgs
6.2mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 3.8V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, No Lead
Supplier Device Package
6-WLCSP (1.79x1.18)
Base Product Number
EFC2K101