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GermanyIRF6711STRPBF
Номер запчасти
Номер запчасти изготовителя
IRF6711STRPBF
Примечания
MOSFET N-CH 25V 19A DIRECTFET
Подробное описание
N-Channel 25 V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
Производитель
Infineon Technologies
Стандартный срок поставки
Модель EDACAD
Стандартная упаковка
4,800
Запасы поставщиков
Технические нормы
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Base Product Number
IRF6711
Классификация окружающей среды и экспорта
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Другие названия
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Категория
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6711STRPBF
Документация и средства массовой информации
Datasheets
1(IRF6711S(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6711S(TR)PbF)
Simulation Models
1(IRF6711STR1PBF Saber Model)
Количественные цены
-
Альтернативы
-