Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(T)
Base Product Number
TK31Z60