Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
102mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
485mW (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-HUSON (2x2)
Package / Case
6-UFDFN Exposed Pad
Base Product Number
PMFPB8032