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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IPD100N06S403ATMA1
DESCRIZIONE
MOSFET N-CH 60V 100A TO252-3-11
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
2,500
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD100N
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IPD100N06S4-03-ND
INFINFIPD100N06S403ATMA1
SP000415576
IPD100N06S4-03
IPD100N06S403ATMA1TR
2156-IPD100N06S403ATMA1
2156-IPD100N06S403ATMA1-ITTR-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD100N06S403ATMA1
Documenti e supporti
Datasheets
1(IPD100N06S4-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
()
Quantità Prezzo
-
Sostituti
Parte n. : IPD100N06S403ATMA2
Produttore. : Infineon Technologies
Quantità disponibile. : 2,876
Prezzo unitario. : $2.17000
Tipo sostitutivo. : Direct
Quantità disponibile. : 2,876
Prezzo unitario. : $2.17000
Tipo sostitutivo. : Direct