Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRF520NSTRLPBF
DESCRIZIONE
MOSFET N-CH 100V 9.7A D2PAK
DESCRIZIONE DETTAGLIATA
N-Channel 100 V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
800

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF520

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

IRF520NSTRLPBFCT
INFINFIRF520NSTRLPBF
IRF520NSTRLPBFDKR
SP001551098
2156-IRF520NSTRLPBF
IRF520NSTRLPBFTR
IRF520NSTRLPBF-ND

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF520NSTRLPBF

Documenti e supporti

Datasheets
1(IRF520N(S,L)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRF520N(S,L)PbF)
Simulation Models
1(IRF520NS Saber Model)

Quantità Prezzo

-

Sostituti

Parte n. : IRL520NSTRLPBF
Produttore. : Infineon Technologies
Quantità disponibile. : 2,858
Prezzo unitario. : $1.20000
Tipo sostitutivo. : MFR Recommended