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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
HAT2256RWS-E
DESCRIZIONE
MOSFET N-CH 60V 8A 8SOP
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 8A (Ta) 2W (Ta) Surface Mount 8-SOP
PRODUTTORE
Renesas Electronics Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1210 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2256RWS-E
Documenti e supporti
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Quantità Prezzo
-
Sostituti
-