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GermanyAPT11GF120BRDQ1G
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT11GF120BRDQ1G
DESCRIZIONE
IGBT 1200V 25A 156W TO247
DESCRIZIONE DETTAGLIATA
IGBT NPT 1200 V 25 A 156 W Through Hole TO-247 [B]
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
30
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
25 A
Current - Collector Pulsed (Icm)
24 A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 8A
Power - Max
156 W
Switching Energy
300µJ (on), 285µJ (off)
Input Type
Standard
Gate Charge
65 nC
Td (on/off) @ 25°C
7ns/100ns
Test Condition
800V, 8A, 10Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]
Base Product Number
APT11G
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APT11GF120BRDQ1G-ND
150-APT11GF120BRDQ1G
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT11GF120BRDQ1G
Documenti e supporti
Datasheets
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Environmental Information
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HTML Datasheet
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Quantità Prezzo
-
Sostituti
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